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Category Archives: Uncategorized

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philipp.kuhne Uncategorized

Protected: Hengfang Zhang: Polarity control and crystalline quality improvement of N-polar GaN on SiC (000-1)

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philipp.kuhne Uncategorized

Protected: Sean Knight: Influence of Al content on the two-dimensional electron gas properties in AlGaN/GaN high-electron-mobility transistor structures

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philipp.kuhne Uncategorized

Protected: Steffen Richter: High-field frequency-scanning EPR-Ellipsometry of Fe in Ga2O3

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philipp.kuhne Uncategorized

Protected: Ding Yuan Chen: Improved Passivation, Ohmic Contacts, and ‘Buffer-Free’ Structure of GaN HEMTs for High-Frequency Applications

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philipp.kuhne Uncategorized

Protected: Alexis Papamichail: Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers

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philipp.kuhne Uncategorized

Protected: Dat Tran: Non-Debye Relaxation Time Approximation Model for Thermal Conductivity Calculations in Wide-Bandgap Semiconductors

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philipp.kuhne Uncategorized

Protected: Rosalia Delgado-Carrascon: Exploring hot-wall MOCVD for high-quality homoepitaxial GaN with low impurity levels

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philipp.kuhne Uncategorized

Protected: Ingemar Persson: Filtering dislocations and reducing surface roughness in N-polar GaN: insights from aberration-corrected STEM

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philipp.kuhne Uncategorized

Protected: Ragnar Del Castillo: High Temperature Treatment Effects on Fluorine-based Gate-Recess Etching of First Passivation SiNx AlGaN/GaN HEMTs

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philipp.kuhne Uncategorized

Protected: Nerijus Armakavicius: Electron effective mass enhancement in GaN and GaN HEMTs studied by THz optical Hall effect

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