The C3NiT day will be held in Linköping on 12th of November 2019. This one-day workshop is the prime event to present the latest research developments in the Swedish Centre for III-Nitride Technology, C3NiT – Janzén. The workshop  features invited talks by leading experts in the field of GaN technology for RF & Power Electronics,  from Europe, Japan and USA.

C3NiT Centre Day - 12th of November 2019

Jun Suda Department of Electronics, Nagoya University, Japan
Development of vertical GaN power devices
Sylvain Delage, III-V lab
Perspective on GaN RF technology of the future
Ezgi Dogmus, Yole Development
Overview on GaN RF and power market
Grace Xing, Cornell University
Power Electronics Based on GaN and Ga2O3 Bulk Substrates
Elke Meissner, Fraunhofer IISB
III-Nitride substrates and defect characterization
Peter Raad, Southern Methodist University
Thermal analysis and thermal management of electronic devices
to the sky


Jun Suda

Department of Electronics, Nagoya University, Japan

GaN vertical power devices have attracted much attention as next generation power devices with large current and high
voltage capabilities. Pioneering works such as vertical AlGaN/GaN field-effect transistors or GaN trench MOSFETs on GaN
substrates were reported over a decade ago. However, at that time, quality of GaN substrates was not sufficient and
growth and device processes for vertical devices were not established. In 2014, ARPA-E started a new program, SWITCHES
(strategies for wide bandgap, inexpensive transistors for controlling high-efficiency systems) mainly focusing on GaN
vertical power devices.In the same year, Japanese government stated up a new project on R&D of fundamental technologies
for GaN vertical power devices (SIP-GaN) as a part of cross-ministerial strategic innovation promotion program. The
project focused on not device demonstration but the most important technologies for GaN vertical power devices, i.e.,
substrates, homoepitaxy of drift layers, ion implantation and MOS interface as well as characterization of fundamental
material properties of GaN relating vertical devices. As the project leader, the author reviews results of the SIP-GaN
and discusses about future directions of development of GaN vertical power devices.

Elke Meissner

Fraunhofer Institute for Integrated Systems and Device Technology, Germany

Schottkystr. 10, 91058 Erlangen

The performance and reliability of an electrical device is decisive for its application and wider usage. Novel devices
often show an outstanding performance in laboratory environment but have to survive field conditions and perform free of
failure for a long time. If a failure of the device occurs, the origin has to be identified and may have various causes
ranging from materials defects over processing issues, packaging problems and others. This talk will pick up this topic
from a materials point of view and will discuss what defects in the materials can be influencing for the electrical
function of a nitride device and how such materials defects can be analyzed. Thereby materials issues in the substrates
stemming from crystal growth will be discussed as well as defects in epitaxial layers for device structures.