Articles

  1. Y.-K. Lin, J. Bergsten, H. Leong, A. Malmros, J.-T. Chen, D.-Y. Chen, O. Kordina, H. Zirath, E.Y. Chang, N. Rorsman, A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs, Semicond. Sci. Technol. (2018) 095019. doi:10.1088/1361-6641/aad7a8.
  2. P. Kuhne, N. Armakavicius, V. Stanishev, C.M. Herzinger, M. Schubert, V. Darakchieva, Advanced Terahertz Frequency-Domain Ellipsometry Instrumentation for <italic>In Situ</italic> and <italic>Ex Situ</italic> Applications, IEEE Trans. THz Sci. Technol. (2018) 257–270. doi:10.1109/tthz.2018.2814347.
  3. N. Armakavicius, V. Stanishev, S. Knight, P. Kühne, M. Schubert, V. Darakchieva, Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect, Appl. Phys. Lett. (2018) 082103. doi:10.1063/1.5018247.

M. O. Eriksson, S. Khromov, P. P. Paskov, X. Wang, A. Yoshikawa, P.O. Holtz, B. Monemar and V. Darakchieva
“Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity”
AIP Advances 9, 015114 (2019).

M. Schubert, A. Mock, R. Korlacki and V. Darakchieva
“Phonon order and reststrahlen bands of polar vibrations in crystals with monoclinic symmetry”
Physical Review B. 99. 10.1103/PhysRevB.99.041201. (2019 )

M. Schubert, A. Mock, R. Korlacki, S. Knight, Z. Galazka, G. Wagner, V. Wheeler, M. Tadjer, K. Goto, and V. Darakchieva
“Longitudinal phonon plasmon mode coupling in β-Ga2O3“
Appl. Phys. Lett. 114, 102102 (2019). Editor’s pick

A. Malmros, P. Camara, M. Thorsell, H. Hjelmgren, C. Lacam,S. Delage, H. Zirath, and N. Rorsman
“Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaNHEMTs With an AlGaNBack Barrier”

IEEE Transactions an Electron Devices 66, 18364846 (2018)

Y.-K. Lin, J. Bergsten, A. Malmros, Jr. Tai Chen, D.Y. Chen, O. Kordina, H. Zirath, E.Y. Chang, and N. Rorsman
”A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs”
Semiconductor Science and Technology 33, 095019 (2018)

Jr.-Tai Chen, J. Bergsten, J. Lu, E. Janzen, M. Thorsell, L. Hultman, N. Rorsman and O. Kordina,
“A GaN–SiC hybrid material for high-frequency and power electronics“ Appl. Phys. Lett. 113, 041605 (2018)

T. Huang, H. Jiang, J. Bergsten, K. M. Lau,  N. Rorsman ”Enhanced gate stack stability in GaNtransistors with gate dielectric of bilayer SiNxby low pressure chemical vapor deposition”, Appl. Phys. Lett. 113, 232102 (2018)

P. Kühne, N. Armakavicius, V. Stanishev, C. M. Herzinger, M. Schubert, and V. Darakchieva
“Advanced Terahertz Frequency-Domain Ellipsometry Instrumentation for In Situ and Ex Situ Applications”
IEEE Transactions on Terahertz Science and Technology 8, 257 (2018). Invited review

N. Armakavicius, V. Stanishev, S. Knight, P. Kühne, M. Schubert, and V. Darakchieva
“Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect”
Appl. Phys. Lett. 112, 082103 (2018)

Conference contributions

13th International Conference on Nitride Semiconductors, ICNS-13, Bellevue USA,
July 2019

21st International Vacuum Congress IVC-21, Malmö, Sweden, July 2019

8th South African Conference on Photonic Materials, Kariega, SA, May 2019

International Workshop on Nitride Semiconductors, IWN2018, Kanazawa, Japan