Articles

  • Schubert, M.; Mock, A.; Korlacki, R.; Knight, S.; Galazka, Z.; Wagner, G.; Wheeler, V.; Tadjer, M.; Goto, K.; Darakchieva, V. Longitudinal Phonon Plasmon Mode Coupling in β-Ga2O3. Appl. Phys. Lett. 2019, 102102. https://doi.org/10.1063/1.5089145.
  • Eriksson, M. O.; Khromov, S.; Paskov, P. P.; Wang, X.; Yoshikawa, A.; Holtz, P. O.; Monemar, B.; Darakchieva, V. Recombination Processes in Mg Doped Wurtzite InN Films with P- and n-Type Conductivity. AIP Advances 2019, 015114. https://doi.org/10.1063/1.5052432.
  • Schubert, M.; Mock, A.; Korlacki, R.; Darakchieva, V. Phonon Order and Reststrahlen Bands of Polar Vibrations in Crystals with Monoclinic Symmetry. Phys. Rev. B 2019, 99 (4), 041201. https://doi.org/10.1103/PhysRevB.99.041201.
  • Malmros, A.; Chen, J.-T.; Hjelmgren, H.; Lu, J.; Hultman, L.; Kordina, O.; Sveinbjornsson, E. O.; Zirath, H.; Rorsman, N. Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer. IEEE Trans. Electron Devices 2019, 1–6. https://doi.org/10.1109/ted.2019.2914674.
  • Malmros, A.; Gamarra, P.; Thorsell, M.; Hjelmgren, H.; Lacam, C.; Delage, S. L.; Zirath, H.; Rorsman, N. Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier. IEEE Trans. Electron Devices 2019, 364–371. https://doi.org/10.1109/ted.2018.2881319.
  • Huang, T.; Jiang, H.; Bergsten, J.; Lau, K. M.; Rorsman, N. Enhanced Gate Stack Stability in GaN Transistors with Gate Dielectric of Bilayer SiNx by Low Pressure Chemical Vapor Deposition. Appl. Phys. Lett. 2018, 232102. https://doi.org/10.1063/1.5042809.
  • Armakavicius, N.; Stanishev, V.; Knight, S.; Kühne, P.; Schubert, M.; Darakchieva, V. Electron Effective Mass in In0.33Ga0.67N Determined by Mid-Infrared Optical Hall Effect. Appl. Phys. Lett. 2018, 082103. https://doi.org/10.1063/1.5018247.
  • Kuhne, P.; Armakavicius, N.; Stanishev, V.; Herzinger, C. M.; Schubert, M.; Darakchieva, V. Advanced Terahertz Frequency-Domain Ellipsometry Instrumentation for In Situ and Ex Situ Applications. IEEE Trans. THz Sci. Technol. 2018, 257–270. https://doi.org/10.1109/tthz.2018.2814347.
  • Lin, Y.-K.; Bergsten, J.; Leong, H.; Malmros, A.; Chen, J.-T.; Chen, D.-Y.; Kordina, O.; Zirath, H.; Chang, E. Y.; Rorsman, N. A Versatile Low-Resistance Ohmic Contact Process with Ohmic Recess and Low-Temperature Annealing for GaN HEMTs. Semicond. Sci. Technol. 2018, 095019. https://doi.org/10.1088/1361-6641/aad7a8.
  • Chen, J.-T.; Bergsten, J.; Lu, J.; Janzén, E.; Thorsell, M.; Hultman, L.; Rorsman, N.; Kordina, O. A GaN–SiC Hybrid Material for High-Frequency and Power Electronics. Appl. Phys. Lett. 2018, 041605. https://doi.org/10.1063/1.5042049.
  • Bergsten, J.; Thorsell, M.; Adolph, D.; Chen, J.-T.; Kordina, O.; Sveinbjornsson, E. O.; Rorsman, N. Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers. IEEE Trans. Electron Devices 2018, 2446–2453. https://doi.org/10.1109/ted.2018.2828410.

PhD Theses

  1. Malmros,N. Advanced III-Nitride Technology for mm-Wave Applications, Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 4594 , 2019.
  2. https://research.chalmers.se/en/publication/510091.
  3. Armakavicius, N. Free Charge Carrier Properties in Group III Nitrides and Graphene Studied by THz-to-MIR Ellipsometry and Optical Hall Effect. Linköping Studies in Science and Technology. Dissertations, 2019. https://doi.org/10.3384/diss.diva-154921.
  4. Bergsten, J. Buffer Related Dispersive Effects in Microwave GaN HEMTs, Calmers University of Technology: Chalmers, Sweden, 2018.
  5. research.chalmers.se/publication/501617

Master Theses

  • Ohlsson, K. Optimization of Uniformity in Enhancement of Metal Organic Chemical Vapor Deposition Growth, Linköping University: Linköping, 2019.

Conference contributions

APWS 2019, Okinawa, Japan, November 2019

  • M. Schubert, A. Mock, R. Korlacki, S. Knight, V. Darakchieva, S. Galazka, G. Wagner, H. Murakami, Y. Kumagai, K. Goto, M. Higashiwaki, and J. Speck. Phonons, free charge carriers, excitons and band-to-band transitions in β Ga2O3 and related alloys determined by ellipsometry and optical Hall effect (Invited talk)


8th international conference on spectroscopic ellipsometry, ICSE-8, Barcelona, Spain 2019

  • Stealth Technology-Based Terahertz Frequency-Domain Ellipsometry for In-situ and Exsitu Applications N. Armakavicius, P. Kuehne, V. Stanishev, S. Knight, T. Hofmann, C.M., Herzinger, M. Schubert, and V. Darakchieva. (Invited talk)
  • Field- and temperature-dependent optical Hall effect in group-III nitrides P. Kuehne, N. Armakavicius, V. Stanishev, Jr-Tai Chen, O. Kordina, M. Schubert, and V. Darakchieva (Talk)
  • Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry for Materials Characterization S. Knight, M. Schubert, C. Binek, D. Prabhakaran, A. Lipatov, and A. Sinitskii (Invited Talk)
  • Longitudinal phonon plasmon mode coupling and the strain-stress relationships in beta-Ga2O3 M. Schubert, A. Mock, R. Korlacki, S. Knight, Z. Galazka, G. Wagner, V. Wheeler, M. Tadjer, K. Goto, and V. Darakchieva (Talk)
  • Generalized Ellipsometry on Low Symmetry Materials A. Mock, R. Korlacki, S. Knight, M. Tadjer, V. Darakchieva, and M. Schubert (Invited talk)

  • 13th International Conference on Nitride Semiconductors, ICNS-13, Bellevue USA,
    July 2019

  • Delgado-Carrascon, R.; Tran, D.; Sukkaew, P.; Mock, A.; Paskov, P. P.; Ciechonski, R.; Ohlsson, J.; Zhu, Y.; Monemar, B.; Samuelson, L.; Darakchieva, V.;, “High quality GaN templates by coalescence overgrowth of GaN nanowires by MOCVD” (poster)
  • Zhang, H.; Persson, I.; Persson, per; Mock, A.; Sukkaew, P.; Chen, J.-T.; Darakchieva, V. Polarity Control in Hot-Wall MOCVD III-Nitride Epitaxy on on-Axis and Vicinal SiC (000 ̅1) Substrates; Bellevue USA, 2019.
  • Abstract
  • Tran, D. Q.; Sukkaew, P.; Zhang, H.; Chen, J.-T.; Iwaya, M.; Akasaki, I.; Monemar, B.; Darackchieva, V.; Paskov, P. P. Thermal Conductivity of AlGaN Layers Grown by MOCVD; Bellevue USA, 2019.
  • Abstract


    21st International Vacuum Congress IVC-21, Malmö, Sweden, July 2019

  • Delgado-Carrascon, R. Tran, D. Sukkaew, P. Mock, A. Paskov, P. P. Ciechonski, R. Ohlsson, J. Zhu, Y. Monemar, B. Samuelson, L. et al. High Quality GaN Templates by Coalescence Overgrowth of GaN Nanowires by MOCVD; Malmö, Sweden, 2019.
  • Abstract
  • Zang, H. Paskov, P. Kordina, O. Chen, J.-T. Darakchieva, V. N-polar epitaxy of III Nitrides by hot wall MOCVD (talk); Malmö, Sweden, 2019.

  • 8th South African Conference on Photonic Materials, Kariega, SA, May 2019

    • Kühne, P. Armakavicius, N. Stanishev, V. Chen, J.-T.; Kordina, O. Schubert, M. Darakchieva, V. Free Charge Carrier Properties in Group-III Nitride High Electron Mobility Transistor Structures Determined by Optical Hall Effect; Kariega, South Africa, 2019.

    Abstract

    • Zhang, H. Persson, I. Persson, P. Mock, A. Sukkaew, P. Chen, J.-T. Darakchieva, V. A Comprehensive Study of AlN Nucleation Layers Grown onto On-Axis and 4° off-Axis SiC (000𝟏̅) Substrates and Its Influence on GaN Growth; Kariega, South Africa, 2019.

    Abstract

    • Tran, D. Q. Sukkaew, P. Mock, A. Zhang, H. Blumenschein, N. Muth, John F. Paskov, P. P. Darackchieva, V. Thermal Conductivity of Ultra-Wide Bandgap Thin Layers: High-Al Content AlGaN and 𝜷-Ga2O3; Kariega, South Africa, 2019.

    Abstract

    • Darackchieva, V. Free charge carrier properties and phonon-plasmon coupling in ultrawide band gap semiconductors (invited talk); Kariega, South Africa, 2019.

     

    Speck SPIE Opto Photonics West 2019, San Francisco, California, U.S.A., February 2019

    • M. Schubert, A. Mock, R. Korlacki, S. Knight, V. Darakchieva, S. Galazka, G. Wagner, H. Murakami, Y. Kumagai, K. Goto, M. Higashiwaki, and J. Speck. Phonon-plasmon coupling in monoclinic symmetry Ga2O3 (Invited talk)

     

    10th International Workshop on Nitride Semiconductors, IWN2018, Kanazawa, Japan, November 2018

    • Sukkaew, P. Rönnby, K. Chen, J.-T. Zhang, H. Ojamäe, L. Darakchieva, V. Investigation of Growth Mode in AlN Buffer Layer for Strain and Dislocation Control in Al-Rich AlGaN Using Hot-Wall MOCVD; Kanazawa, Japan, 2018.

    Poster

    • Zhang, H. Persson, I. Persson, P. Mock, A. Sukkaew, P. Chen, J.-T. Darakchieva, V. Comparative Study of GaN Grown on On-Axis and Vicinal SiC (000𝟏̅) Substrates by Hot-Wall MOCVD; Kanazawa, Japan, 2018.

    Abstract

    • Sukkaew, P. Rönnby, K. Chen, J.-T. Zhang, H. Ojamäe, L. Darakchieva, V. Control of Growth Mode, Dislocations and Strain in Al-Rich AlGaN by Hot-Wall MOCVD; Kanazawa, Japan, 2018.

    Poster

    • Sukkaew, P. Chen, J.-T. Zhang, H. Darakchieva, V. The Control of Growth Mode and Strain in Al-Rich AlGaN by MOCVD; Kanazawa, Japan, 2019.

    Abstract

    European Microwave week CSW2018, Madrid, Spain, September 2018

    • I. Angelov, “Modeling Semiconductor devices for PA” (Invited talk)

    7th International Symposium on Growth of Nitride Semiconductors, ISGN-7, Warsaw, Poland, August 2018

    • Zhang, H. Sukkaew, P. Chen J.-T. and Darakchieva, V. “Hot-wall MOCVD growth of N-polar AlN nucleation layers on C-face vicinal and on-axis SiC substrates” (talk)

    GaN Marathon 2.0, Padova, Italy, April 2018

    • Jr. Tai Chen ”A revolutionaryy GaN-on-SiC epitaxy for high frequency power transistors” (Invited talk)

    Compound Semiconductor Week CSW2018, MIT, USA, May 2018

    • I. Angelov et al. “On the large Signal Modeling of MM wave GaAs PIN
      diodes” (poster)