Articles

  1. Schubert, M.; Mock, A.; Korlacki, R.; Knight, S.; Galazka, Z.; Wagner, G.; Wheeler, V.; Tadjer, M.; Goto, K.; Darakchieva, V. Longitudinal Phonon Plasmon Mode Coupling in β-Ga2O3. Appl. Phys. Lett. 2019, 102102. https://doi.org/10.1063/1.5089145.
  2. Eriksson, M. O.; Khromov, S.; Paskov, P. P.; Wang, X.; Yoshikawa, A.; Holtz, P. O.; Monemar, B.; Darakchieva, V. Recombination Processes in Mg Doped Wurtzite InN Films with P- and n-Type Conductivity. AIP Advances 2019, 015114. https://doi.org/10.1063/1.5052432.
  3. Schubert, M.; Mock, A.; Korlacki, R.; Darakchieva, V. Phonon Order and Reststrahlen Bands of Polar Vibrations in Crystals with Monoclinic Symmetry. Phys. Rev. B 2019, 99 (4), 041201. https://doi.org/10.1103/PhysRevB.99.041201.
  4. Malmros, A.; Chen, J.-T.; Hjelmgren, H.; Lu, J.; Hultman, L.; Kordina, O.; Sveinbjornsson, E. O.; Zirath, H.; Rorsman, N. Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer. IEEE Trans. Electron Devices 2019, 1–6. https://doi.org/10.1109/ted.2019.2914674.
  5. Malmros, A.; Gamarra, P.; Thorsell, M.; Hjelmgren, H.; Lacam, C.; Delage, S. L.; Zirath, H.; Rorsman, N. Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier. IEEE Trans. Electron Devices 2019, 364–371. https://doi.org/10.1109/ted.2018.2881319.
  6. Huang, T.; Jiang, H.; Bergsten, J.; Lau, K. M.; Rorsman, N. Enhanced Gate Stack Stability in GaN Transistors with Gate Dielectric of Bilayer SiNx by Low Pressure Chemical Vapor Deposition. Appl. Phys. Lett. 2018, 232102. https://doi.org/10.1063/1.5042809.
  7. Armakavicius, N.; Stanishev, V.; Knight, S.; Kühne, P.; Schubert, M.; Darakchieva, V. Electron Effective Mass in In0.33Ga0.67N Determined by Mid-Infrared Optical Hall Effect. Appl. Phys. Lett. 2018, 082103. https://doi.org/10.1063/1.5018247.
  8. Kuhne, P.; Armakavicius, N.; Stanishev, V.; Herzinger, C. M.; Schubert, M.; Darakchieva, V. Advanced Terahertz Frequency-Domain Ellipsometry Instrumentation for In Situ and Ex Situ Applications. IEEE Trans. THz Sci. Technol. 2018, 257–270. https://doi.org/10.1109/tthz.2018.2814347.
  9. Lin, Y.-K.; Bergsten, J.; Leong, H.; Malmros, A.; Chen, J.-T.; Chen, D.-Y.; Kordina, O.; Zirath, H.; Chang, E. Y.; Rorsman, N. A Versatile Low-Resistance Ohmic Contact Process with Ohmic Recess and Low-Temperature Annealing for GaN HEMTs. Semicond. Sci. Technol. 2018, 095019. https://doi.org/10.1088/1361-6641/aad7a8.
  10. Chen, J.-T.; Bergsten, J.; Lu, J.; Janzén, E.; Thorsell, M.; Hultman, L.; Rorsman, N.; Kordina, O. A GaN–SiC Hybrid Material for High-Frequency and Power Electronics. Appl. Phys. Lett. 2018, 041605. https://doi.org/10.1063/1.5042049.

PhD Theses

  1. Armakavicius, N. Free Charge Carrier Properties in Group III Nitrides and Graphene Studied by THz-to-MIR Ellipsometry and Optical Hall Effect. Linköping Studies in Science and Technology. Dissertations, 2019. https://doi.org/10.3384/diss.diva-154921.
  2. Bergsten, J. Buffer Related Dispersive Effects in Microwave GaN HEMTs, Calmers University of Technology: Chalmers, Sweden, 2018.
  3. research.chalmers.se/publication/501617

Master Theses

  1. Ohlsson, K. Optimization of Uniformity in Enhancement of Metal Organic Chemical Vapor Deposition Growth, Linköping University: Linköping, 2019.

Conference contributions

13th International Conference on Nitride Semiconductors, ICNS-13, Bellevue USA,
July 2019

  • Zhang, H.; Persson, I.; Persson, per; Mock, A.; Sukkaew, P.; Chen, J.-T.; Darakchieva, V. Polarity Control in Hot-Wall MOCVD III-Nitride Epitaxy on on-Axis and Vicinal SiC (000 ̅1) Substrates; Bellevue USA, 2019.
  • Abstract
  • Tran, D. Q.; Sukkaew, P.; Zhang, H.; Chen, J.-T.; Iwaya, M.; Akasaki, I.; Monemar, B.; Darackchieva, V.; Paskov, P. P. Thermal Conductivity of AlGaN Layers Grown by MOCVD; Bellevue USA, 2019.
  • Abstract

21st International Vacuum Congress IVC-21, Malmö, Sweden, July 2019

  • Delgado-Carrascon, R.; Tran, D.; Sukkaew, P.; Mock, A.; Paskov, P. P.; Ciechonski, R.; Ohlsson, J.; Zhu, Y.; Monemar, B.; Samuelson, L.; et al. High Quality GaN Templates by Coalescence Overgrowth of GaN Nanowires by MOCVD; Malmö, Sweden, 2019.
  • Abstract

8th South African Conference on Photonic Materials, Kariega, SA, May 2019

  • Kühne, P.; Armakavicius, N.; Stanishev, V.; Chen, J.-T.; Kordina, O.; Schubert, M.; Darakchieva, V. Free Charge Carrier Properties in Group-III Nitride High Electron Mobility Transistor Structures Determined by Optical Hall Effect; Kariega, South Africa, 2019.
  • Abstract
  • Zhang, H.; Persson, I.; Persson, P.; Mock, A.; Sukkaew, P.; Chen, J.-T.; Darakchieva, V. A Comprehensive Study of AlN Nucleation Layers Grown onto On-Axis and 4° off-Axis SiC (000𝟏̅) Substrates and Its Influence on GaN Growth; Kariega, South Africa, 2019.
  • Abstract
  • Tran, D. Q.; Sukkaew, P.; Mock, A.; Zhang, H.; Blumenschein, N.; Muth, John F.; Paskov, P. P.; Darackchieva, V. Thermal Conductivity of Ultra-Wide Bandgap Thin Layers: High-Al Content AlGaN and 𝜷-Ga2O3; Kariega, South Africa, 2019.
  • Abstract

International Workshop on Nitride Semiconductors, IWN2018, Kanazawa, Japan

  • Sukkaew, P.; Rönnby, K.; Chen, J.-T.; Zhang, H.; Ojamäe, L.; Darakchieva, V. Investigation of Growth Mode in AlN Buffer Layer for Strain and Dislocation Control in Al-Rich AlGaN Using Hot-Wall MOCVD; Kanazawa, Japan, 2018.
  • Poster
  • Zhang, H.; Persson, I.; Persson, P.; Mock, A.; Sukkaew, P.; Chen, J.-T.; Darakchieva, V. Comparative Study of GaN Grown on On-Axis and Vicinal SiC (000𝟏̅) Substrates by Hot-Wall MOCVD; Kanazawa, Japan, 2018.
  • Abstract
  • Sukkaew, P.; Rönnby, K.; Chen, J.-T.; Zhang, H.; Ojamäe, L.; Darakchieva, V. Control of Growth Mode, Dislocations and Strain in Al-Rich AlGaN by Hot-Wall MOCVD; Kanazawa, Japan, 2018.
  • Poster
  • Sukkaew, P.; Chen, J.-T.; Zhang, H.; Darakchieva, V. The Control of Growth Mode and Strain in Al-Rich AlGaN by MOCVD; Kanazawa, Japan, 2019.
  • Abstract